|Table of Contents|

Optimization design of gas distributor for CVD reactor by CFD simulation(PDF)

《火箭推进》[ISSN:1672-9374/CN:CN 61-1436/V]

Issue:
2014年03期
Page:
46-51
Research Field:
研究与设计
Publishing date:

Info

Title:
Optimization design of gas distributor for CVD reactor by CFD simulation
Author(s):
WANG Yi;  YANG Xiao-hui;  BAI Long-teng
Xi’an Aerospace Propulsion Institute, Xi’an 710100, China
Keywords:
CFD;  gas distributor;  CVD
PACS:
V258+.3-34
DOI:
-
Abstract:
The simulation analysis on flow field in the CVD(chemical vapor deposition) reaction chamber was performed with computational fluid dynamics (CFD) finite element simulation method. The relationship of the pore size and pore distribution of the gas distributor with local flow field in the prefabricated body was obtained, by which the design of the gas distributor was optimized, and the uniformity and stability of the flow field in the reactor were improved.

References:

[1]XU Yong-dong, ZHANG Li-tong, CHENG Lai-fei, et al. Microstructure and mechanical properties of three- dimensional carbon/silicon carbide composites fabricated by chemical vapor infiltration[J]. Carbon, 1998, 36(7-8): 1051-1056.
[2]CHENG Lai-fei, XU Yong-dong, ZHANG Li-tong, et al. Oxidation behavior of carbon-carbon composites with a three-layer coating from room temperature to 1700 ℃[J]. Carbon, 1999, 37(6): 977-981.
[3]XU Yong-dong, CHENG Lai-fei, ZHANG Li-tong. Car- bon/silicon carbide composites prepared by chemical vapor infiltration combined with silicon melt infiltration[J]. Carbon, 1999, 37(8): 1179-1187.
[4]LANGLAIS F, LOUMAGNE F, LESPIAUX D, et al. Kinetic processes in the CVD of SiC from CH3SiCl3-H2 in a vertical hot-wall reactor[J]. Journal De Physique IV, 1995 (5): 105-112.
[5]徐永东, 张立同. 常压化学气相沉积 SiC 的组织结构及其稳定性[J]. 航空学报, 1997, 18(1): 123-126.
[6]何新波, 张长瑞. 碳纤维增强碳化硅复合材料的力学性能与界面[J]. 中南工业大学学报, 2000, 31(4): 342-345.
[7]MIZUNO Y, UEKUSA S. Analysis of reaction gases flow in CVD processes [J]. Materials Science and Engineering: B, 1995, 35(1/3): 156-159.
[8]MURALIDHAR V, ESWARAN V K, WADHAWAN. Modelling of transport phenomena in a low-pressure CVD reactor[J]. Journal of Crystal Growth, 2004, 267(3/4): 598-612.
[9]KOMMU S B, KHOMAMI P. Simulation of aerosol dynamics and transport in chemically reacting particulate matter laden flows. Part II: Application to CVD reactors [J]. Chemical Engineering Science, 2004, 59(2): 359-371.
[10]WEI Xi, CHENG Lai-fei, ZHANG Li-tong, et al. Nume- rical simulation for fabrication of C/SiC composites in isothermal CVI reactor[J]. Computational Materials Science, 2006, 38(2): 245-255.
[11]陈晋, 徐永东, 曾庆丰, 等. CVI 反应器内部气体流场的有限元模拟及优化设计[J]. 航空材料学报, 2006, 26(5): 86-90.
[12]肖鹏, 熊翔, 黄伯云. 化学气相浸渗反应器内气体流场的数值模拟[J]. 中南大学学报: 自然科学版, 2005, 5(5): 1-5.
[13]薛海鹏, 卢文壮, 沈飞荣, 等. 模具法制备 CVD 金刚石热沉片的温度场与流场研究[J]. 人工晶体学报, 2012, 41(4): 877-882.
[14]黄绍江, 谢红希, 侯惠君, 等. 等离子体化学气相沉积的布气装置之设计[J]. 广东有色金属学报, 2002, 12(1): 21-25.
[15]王成刚, 李桂琴, 陆利新, 等. 增强型等离子化学气象沉积炉均匀布气研究[J]. 计算机仿真, 2010, 27(6): 122- 125.
[16]金捷, 朱红萍, 王成刚. PECVD 布气装置气流场的模拟分析[J]. 现代制造工程, 2012 (12): 93-96.
[17]姚连增. 晶体生长基础[M]. 合肥: 中国科学技术大学出版社, 1995.

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