|Table of Contents|

Effect of deposition temperature on microstructure of SiC coating prepared by CVD process(PDF)

《火箭推进》[ISSN:1672-9374/CN:CN 61-1436/V]

Issue:
2014年04期
Page:
50-56
Research Field:
工艺与材料
Publishing date:

Info

Title:
Effect of deposition temperature on microstructure of SiC coating prepared by CVD process
Author(s):
WANG Yi LI Hong-chun GUO Chun-feng
Xi’an Aerospace Propulsion Institute, Xi’an 710100, China
Keywords:
chemical vapor deposition deposition temperature SiC coating microtucture
PACS:
V258+.3-34
DOI:
-
Abstract:
The process of preparing the anti-oxidation coatings of SiC on the C/SiC composite by the chemical vapor deposition method at different temperatures is introduced. The phase and microstructure of the SiC coatings prepared in different process conditions were analyzed by SEM, EDS and XRD. The results reveal that the deposition speed of SiC coating and the grain size increase with the raising of temperature. A higher deposition temperature leads to a fast deposition of the SiC coating, but its surface roughness will be exacerbated.

References:

[1]张立同, 成来飞. 连续纤维增韧陶瓷基复合材料可持续发展战略探讨[J]. 复合材料学报, 2007, 24(2): 1-6.
[2]NASLAIN R, CHRISTIN F. SiC-matrix composite ma- terials for advanced jet engines [J]. MRS Bull, 2003, 28(9): 654-658.
[3]NASLAIN R. Design, preparation and properties of non- oxide CMCs for application in engines and nuclear reactors: an overview[J]. Composites Science and Tech- nology, 2004, 64(2): 155-170.
[4]闫联生, 邹武. 沉积温度对碳化硅基体及其复合材料的影响[J]. 固体火箭技术, 1999, 22(1): 68-71.
[5]张长瑞, 刘荣军,曹英斌. 沉积温度对 CVD SiC 涂层显微结构的影响[J]. 无机材料学报, 2007, 22(1): 153-158.
[6]KIM H, CHUNG G Y, KOO H H, et al. Effects of process parameters for the preparation of C/SiC composites in the F-Chemical vapor infiltration reactor[J]. Korean Journal of Chemical Engineering, 2004, 21(5): 929-934.
[7]朱庆山, 邱学良. 化学气相沉积制备 SiC 涂层-Ⅱ. 动力学研究[J]. 化工冶金, 1998, 19(4): 289-292.
[8]XU Y, CHENG L, ZHANG L. Carbon/silicon carbide composites prepared by chemical vapor infiltration combined with silicon melt infiltration[J]. Carbon, 1999, 37(8): 1179-1187.
[9]XU Y, CHENG L, ZHANG L. Composition, micro- structure, and thermal stability of silicon carbide chemical vapor deposited at low temperatures[J]. Journal of Materials Processing Technology, 2000, 101(1/3): 47-51.
[10]LANGLAIS F, LOUMAGNE F, LESPIAUX D, et al. Kinetic processes in the CVD of SiC from CH3SiCl3-H2 in a vertical hot-wall reactor[J]. Journal de Physique Iv, 1995, 5: 105-112.
[11]卢翠英, 成来飞, 赵春年, 等. 温度对化学气相沉积碳化硅涂层的影响[J]. 材料科学与工艺, 2010, 18(4): 575- 578.
[12]徐永东, 张立同. 常压化学气相沉积 SiC 的组织结构及其稳定性[J]. 航空学报, 1997, 18(1): 123-126.
[13]朱庆山, 邱学良. 化学气相沉积制备 SiC 涂层Ⅰ. 热力学研究[J]. 化工冶金, 1998, 19(3): 193-198.
[14]BESMANN T, STINTON D, MATLIN W. Chemical vapor infiltration process modeling and optimization[R]. Oak Ridge, USA: Oak Ridge National Lab, 1995.
[15]NASLAIN R., LANGLAIS F, FEDOU R. The CVI- processing of ceramic matrix composites[J]. Journal de Physique Colloques, 1989, 50(C5): 191-207.
[16]LOUMAGNE F, LANGLAIS F, NASLAIN R. Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor[J]. Journal de Physique IV, 1993, 3: 527-533.
[17]LOUMAGNE F, LANGLAIS F, NASLAIN R. Experi- mental kinetic study of the chemical vapour deposition of SiC-based ceramics from CH3SiCl3/H2 gas precursor [J]. Journal of Crystal Growth 1995, 155(3/4): 198-204.
[18]姚连增. 晶体生长基础[M]. 合肥: 中国科学技术大学出版社, 1995.
[19]刘荣军, 张长瑞, 周新贵, 等. CVD SiC 致密表面涂层制备及表征[J]. 材料工程, 2005 (004): 3-6.
[20]赵松, 史景利, 魏兴海, 等. 沉积温度对碳芯 SiC 纤维微观结构的影响[J]. 宇航材料工艺, 2011, 41(4): 36-40.

Memo

Memo:
-
Last Update: 1900-01-01