航天推进技术研究院主办
[1]王 毅,李洪春,郭春峰.沉积温度对CVD-SiC涂层显微结构的影响[J].火箭推进,2014,40(04):50-56.
WANG Yi,LI Hong-chun,GUO Chun-feng.Effect of deposition temperature on microstructure of SiC coating prepared by CVD process[J].Journal of Rocket Propulsion,2014,40(04):50-56.
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WANG Yi,LI Hong-chun,GUO Chun-feng.Effect of deposition temperature on microstructure of SiC coating prepared by CVD process[J].Journal of Rocket Propulsion,2014,40(04):50-56.
沉积温度对CVD-SiC涂层显微结构的影响
《火箭推进》[ISSN:1672-9374/CN:CN 61-1436/V]
卷:
40
期数:
2014年04期
页码:
50-56
栏目:
工艺与材料
出版日期:
2014-08-28
- Title:
- Effect of deposition temperature on microstructure of SiC coating prepared by CVD process
- 分类号:
- V258+.3-34
- 文献标志码:
- A
- 摘要:
- 介绍了采用化学气相沉积(CVD)方法在C/SiC复合材料表面制备SiC抗氧化涂层的情况。对不同工艺条件下制备出的SiC涂层，使用SEM，EDS和XRD分析了沉积层的物相和显微结构。结果表明：SiC涂层生长速度随沉积温度升高而升高，晶粒尺寸也随之增大；在较高沉积温度下，可以产生较大的沉积速度，但SiC涂层表面粗糙度将会增大。
- Abstract:
- The process of preparing the anti-oxidation coatings of SiC on the C/SiC composite by the chemical vapor deposition method at different temperatures is introduced. The phase and microstructure of the SiC coatings prepared in different process conditions were analyzed by SEM, EDS and XRD. The results reveal that the deposition speed of SiC coating and the grain size increase with the raising of temperature. A higher deposition temperature leads to a fast deposition of the SiC coating, but its surface roughness will be exacerbated.
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备注/Memo
收稿日期：2014-01-21；修回日期：2014-03-26 作者简介：王毅（1981—），男，博士，研究领域为陶瓷基复合材料制备技术
更新日期/Last Update:
1900-01-01