航天推进技术研究院主办
[1]杨晓辉,王 毅,白龙腾.CVD-PyC界面层和SiC涂层厚度数学计算模型的建立与验证[J].火箭推进,2014,40(05):69-74.
YANG Xiao-hui,WANG Yi,BAI Long-teng.Establishment and confirmation of mathematical computational model of thickness of CVD-PyC interface and SiC coatings[J].Journal of Rocket Propulsion,2014,40(05):69-74.
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YANG Xiao-hui,WANG Yi,BAI Long-teng.Establishment and confirmation of mathematical computational model of thickness of CVD-PyC interface and SiC coatings[J].Journal of Rocket Propulsion,2014,40(05):69-74.
CVD-PyC界面层和SiC涂层厚度数学计算模型的建立与验证
《火箭推进》[ISSN:1672-9374/CN:CN 61-1436/V]
卷:
40
期数:
2014年05期
页码:
69-74
栏目:
工艺与材料
出版日期:
2014-10-28
- Title:
- Establishment and confirmation of mathematical computational model of thickness of CVD-PyC interface and SiC coatings
- 关键词:
- C/SiC复合材料; 化学气相沉积热解炭界面层; 化学气相沉积SiC涂层; 数学模型
- Keywords:
- C/SiC composite; chemical vapor deposition carbon interface; chemical vapor deposition SiC coatingmathe; matical model
- 分类号:
- V258+.-34
- 文献标志码:
- A
- 摘要:
- 建立了合适的化学气相沉积碳界面层厚度数学计算模型和SiC涂层厚度数学计算模型，并通过工艺实验对该模型进行了验证。结合实验结果分析，发现通过该模型计算出的化学气相沉积碳界面层厚度和SiC涂层厚度与SEM照片分析结果基本接近，因此可利用上述模型估算出C/SiC复合材料产品的化学气相沉积碳界面层厚度和SiC涂层厚度，快速评估 C/SiC复合材料产品化学气相沉积质量能否满足实际工况使用要求。
- Abstract:
- The appropriate mathematical computational models for thickness of the chemical vapor deposition carbon interface and the chemical vapor deposition SiC coating were established. Combined with the experimental result analysis, it is found that the thickness values of the chemical vapor deposition carbon interface and SiC coating calculated by the models are closed to the results got from the common SEM picture analysis. As the result, the thickness values of the chemical vapor deposition carbon interface and SiC coating of the C/SiC composite products can be estimated through the established model, thereby it can be used to judge quickly whether the chemical vapor deposition quality of the C/SiC composite products satisfies the requirements of the actual working condition.
参考文献/References:
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[3]TAKEDA M, URANO A, SAKAMOTO J, et al. Micros- tructure and oxidation behavior of silicon carbide fibers derived from polycarbosilane[J]. Journal of the American Ceramic Society, 2000, 83(5): 1171-1176.
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[7]纪锐, 魏永良, 刘文川. 热解碳界面层对碳/碳化硅复合材料拉伸性能的影响[J]. 炭素技术, 1995(2): 6-10.
[8]闫志巧, 熊翔, 肖鹏, 等. C/SiC 复合材料表面化学气相沉积涂覆 SiC 涂层及其抗氧化性能[J]. 硅酸盐学报, 2008, 36(8): 1098-1102.
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[10]闫志巧, 熊翔, 肖鹏, 等. CVD SiC 涂层的C/SiC 复合材料的弯曲性能[J]. 中南大学学报, 2008, 39(6): 1207-1212.
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[12]张青, 成来飞, 张立同, 等. 界面相对3D C/ SiC 复合材料热膨胀性能的影响[J]. 航空学报, 2004, 25(5): 508- 512.
[13]周清, 董绍明, 丁玉生, 等. 界面涂层对气相渗硅Cf/SiC复合材料力学性能的影响[J]. 无机材料学报，2007, 22(6): 1142-1146.
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备注/Memo
收稿日期：2014-02-06；修回日期：2014-03-20 作者简介：杨晓辉（1986—），男，硕士，研究领域为陶瓷基复合材料制备工艺
更新日期/Last Update:
1900-01-01